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Latest advance on seamless metal-semiconductor contact with

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Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Performance prediction of current-voltage characteristics of Schottky diodes at low temperatures using artificial intelligence - ScienceDirect

Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D3CP06189B

ELNES at the 1T /2H-MoTe 2 boundary. (a) A HAADF image showing the

Cong WANG, PhD Student, Chinese Academy of Sciences, Beijing, CAS, National Centre for Nanoscience and Nanotechnology

Scientists revolutionize wireless communicati

Zhongchang Wang's research works International Iberian Nanotechnology Laboratory, Braga and other places

Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices - ScienceDirect

Ralf's GaN & SiC News (February 15, 2024)

Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D3CP06189B

Metal Composite Power Inductor Market Size, Report 2031

Metal-Semiconductors Contacts - Engineering LibreTexts

ELNES at the 1T /2H-MoTe 2 boundary. (a) A HAADF image showing the