TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

IG vs VGS curves with Ta and W as metal gates for In0.53Ga0.47As

IG vs VGS curves with Ta and W as metal gates for In0.53Ga0.47As

I-V curves for Non-graded base SiGe HBT

SANJAY, Ph.D., Kurukshetra University, Ambāla, KUK

Comparison between the current in a Ge quantum-well diode

I-V curves for Non-graded base SiGe HBT

CGG vs VGS curve of Si for SiO2 + HfO2 as gate oxide with metal

Modelled and experimental Hall voltage response in vertical Hall