The paper presents the results of experimental research on the possibilities of micro-geometry modification of conductible and semiconductor surfaces, that gives them new functional properties. It emphasizes that surface micro-geometry modification occurs in practically all cases of the action by concentrated sources of energy, but a prescribed geometry can be reached only under strict conditions. The process of this geometry formation is a function of the physical and mechanical properties and the chemical composition of the processed material, the gradient of applied energy, the intensity of electric field applied in the interstice between the workpiece and the tool-electrode, the connection mode of the workpiece (as anode or as cathode) in the discharge circuit of the current impulse generator, etc. It highlights the fact that on the processed surface can be formed spherical shaped craters, round asperities or Taylor cone shaped asperities. Depending on the shape and the size of asperities, the active surface area, and, respectfully, the emission and absorption properties of elementary particles and light radiation are modified.
Experimentally validated phase-field model to design the
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